Department of Mechanical Engineering

Abhijit Chandra

Professor

3038 Black Engineering Building
Iowa State University
Ames, IA 50011
515-294-4834
e-mail: achandra@iastate.edu

Education
Cornell University, Ph.D. 1983
University of New Brunswick, Canada, M.S.,1980
I.I.T, Kharagpur, India, B. Tech.,1978

Research Interests:
Mechanics of manufacturing processes
Nano-scale surface modification
Multi-Scale and Multi-Physics Modeling
Renewable Energy
Boundary element method

Selected Publications:

  • Chandra, A. and Mukherjee, S., 1997, Boundary Element Methods in Manufacturing, Oxford University Press, New York (ISBN: 0-19-507921-3).

  • Subhash, G., Chandra, A. and Koeppel, B. J., 2002, Apparatus and method for determining the dynamic indenta¬tion hardness of materials, U.S. Patent No. 6,343,502, issued February 5, 2002.

  • Fu, G., Chandra, A., Guha, S. and Subhash, G., 2001, A Plasticity Based Model of Material Removal in Chemical Mechanical Polishing (CMP), IEEE Trans. Semiconductor Manufacturing, vol. 14, no. 4, pp. 406-417.

  • Fu, G. and Chandra, A., 2002, Normal indentation of elastic half space with a rigid frictionless axisymmetric punch, J. Appl. Mech., ASME, vol. 69, pp. 142-147.

  • Fu, G. and Chandra, A., 2002, A Model for Wafer Scale Variation of Material Removal Rate in Chemical Mechanical Polishing (CMP) Based on Viscoelastic Pad deformation, J. Electronic Mat., vol. 31. no. 10, pp. 1066-1073.

  • Bastawros, A. F., Chandra, A., Guo, Y. and Yan, B., 2002, Pad Effects on Material Removal Rate in Chemical Mechanical Planarization, J. Electronic Materials, vol. 31, no. 10, pp. 1022-1031.

  • Ye, Y., Biswas, R., Morris, J., Bastawros, A. and Chandra, A., 2002, Simulation of Chemical Mechanical Planarization of Copper with Molecular Dynamics, Appl. Phys. Letters, vol. 81, no. 10, pp. 1875-1877.

  • Fu, G. and Chandra, A., 2003, An Analytical Dishing and Step height reduction Model for Chemical Mechanical Planarization, IEEE Trans. Semiconductor Manufacturing, vol. 16, no. 3, pp. 477-485.

  • Che, W., Guo, Y., Bastawros, A. F. and Chandra, A., 2003, Mechanistic Understanding of Material Detachment during Micro-scale Polishing, J. Mfg. Sc. Eng., ASME, vol. 125, no. 4, pp. 731-735.

  • Guo, Y., Chandra, A. and Bastawros, A. -F., 2004, An Analytical Dishing and Step Height Reduction Model for Chemical Mechanical Planarization (CMP) with a Viscoelastic Pad, J. Electrochemical Soc. vol. 151, no. 9, pp. G583-G589.

  • Che, W., Guo, Y., Chandra, A. and Bastawros, A.-F., 2005, A Scratch Intersection Model of Material Removal During Chemical Mechanical Planarization, J. Mfg. Sc. Eng., vol. 127, pp. 545-554.

  • Fu, G., and Chandra, A., 2005, The Relationship between Wafer Surface Pressure and Wafer Backside Loading in Chemical Mechanical Polishing, Thin Solid Films, vol. 474, pp. 217-221.

  • Kadavasal, M., Eamkajornsiri, S., Chandra, A. and Bastawros, A. F.., 2005, Yield Improvement via Minimiza¬tion of Step Height Non-uniformity in Chemical Mechanical Planarization (CMP), Int. J. Mfg. Tech. Mgt., vol. 7, no. 5-6, pp. 467-489.

  • Wang, C. X., Sherman, P. and Chandra, A. and Dornfeld, D. A., 2005, Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization (CMP), Annals of CIRP, vol. 54, pp.309-312.

  • Che, W., Bastawros, A. -F. and Chandra, A., 2006, Surface Evolution during the Chemical Mechanical Planariza¬tion of Copper, Annals of the CIRP, vol. 55, pp.  605-608.